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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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STP25N80K5
STP25N80K5
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STP25N80K5
:
Mosfets
:
STMicroelectronics
:
STP25N80K5 Seri
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:
Tube
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TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
800V
Drain-Source On Resistance-Max:
0.26Ω
Rated Power Dissipation:
250|W
Qg Gate Charge:
40nC
Package Style:
TO-220-3 (TO-220AB)
PDF(1)
50
50.8967
2544.835
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