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STP28NM60ND

  • STP28NM60ND
  • STP28NM60ND
STP28NM60ND
Mosfets
STMicroelectronics
Single N-Channe
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Tube
0
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-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:600V
Drain-Source On Resistance-Max:150mΩ
Rated Power Dissipation:190W
Qg Gate Charge:62.5nC
Gate-Source Voltage-Max [Vgss]:25V
Drain Current:23A
Turn-on Delay Time:23.5ns
Turn-off Delay Time:92ns
Rise Time:21.5ns
Fall Time:27ns
Gate Source Threshold:4V
Input Capacitance:2090pF
Package Style: TO-220-3 (TO-220AB)
Mounting Method:Through Hole
: 0

50

77.9208

3896.04

150

66.2783

9941.745

250

65.2751

16318.775

500

63.8363

31918.15

1000

62.3974

62397.4

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