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STP30N65M5

  • STP30N65M5
  • STP30N65M5
STP30N65M5
Mosfets
STMicroelectronics
N-Channel 650 V
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Tube
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TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:650V
Drain-Source On Resistance-Max:0.139Ω
Rated Power Dissipation:140W
Qg Gate Charge:64nC
Gate-Source Voltage-Max [Vgss]:25V
Drain Current:22A
Turn-off Delay Time:50ns
Rise Time:8ns
Fall Time:10ns
Gate Source Threshold:4V
Technology:MDmesh
Input Capacitance:2880pF
Package Style: TO-220-3 (TO-220AB)
Mounting Method:Through Hole
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