取消
| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 650V |
| Drain-Source On Resistance-Max: | 0.14Ω |
| Rated Power Dissipation: | 190W |
| Qg Gate Charge: | 41.5nC |
| Gate-Source Voltage-Max [Vgss]: | 25V |
| Drain Current: | 24A |
| Turn-on Delay Time: | 13.5ns |
| Turn-off Delay Time: | 72.5ns |
| Rise Time: | 11.5ns |
| Fall Time: | 9ns |
| Gate Source Threshold: | 3V |
| Technology: | MDmesh |
| Input Capacitance: | 1790pF |
| Package Style: | TO-220-3 (TO-220AB) |
| Mounting Method: | Through Hole |
1000
34.502
34502
