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STP33N65M2

  • STP33N65M2
  • STP33N65M2
STP33N65M2
Mosfets
STMicroelectronics
N-Channel 650 V
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Tube
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TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:650V
Drain-Source On Resistance-Max:0.14Ω
Rated Power Dissipation:190W
Qg Gate Charge:41.5nC
Gate-Source Voltage-Max [Vgss]:25V
Drain Current:24A
Turn-on Delay Time:13.5ns
Turn-off Delay Time:72.5ns
Rise Time:11.5ns
Fall Time:9ns
Gate Source Threshold:3V
Technology:MDmesh
Input Capacitance:1790pF
Package Style: TO-220-3 (TO-220AB)
Mounting Method:Through Hole
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1000

34.502

34502

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