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STP3LN80K5

  • STP3LN80K5
  • STP3LN80K5
STP3LN80K5
Mosfets
STMicroelectronics
N-Channel 800 V
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:800V
Drain-Source On Resistance-Max:3.25Ω
Rated Power Dissipation:45W
Qg Gate Charge:2.63nC
Gate-Source Voltage-Max [Vgss]:30V
Drain Current:2A
Turn-on Delay Time:6.2ns
Turn-off Delay Time:30ns
Rise Time:7ns
Fall Time:26ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:4V
Technology:MDmesh
Input Capacitance:102pF
Package Style: TO-220-3 (TO-220AB)
Mounting Method:Through Hole
PDF(1)

1000

13.0813

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10.7153

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10.5634

31690.2

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10.4975

41990

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