TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 900V |
Drain-Source On Resistance-Max: | 2Ω |
Rated Power Dissipation: | 30W |
Qg Gate Charge: | 60.5nC |
Gate-Source Voltage-Max [Vgss]: | 30V |
Drain Current: | 5.8A |
Turn-on Delay Time: | 17ns |
Turn-off Delay Time: | 20ns |
Rise Time: | 45ns |
Fall Time: | 20ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 4.5V |
Technology: | Si |
Height - Max: | 9.3mm |
Length: | 10.4mm |
Input Capacitance: | 1350pF |
Package Style: | TO-220FP (TO-220FPAB) |
Mounting Method: | Through Hole |
50
35.2214
1761.07
150
30.3374
4550.61
500
29.3242
14662.1
1000
28.7567
28756.7
2000
28.1792
56358.4