TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 200V |
Drain-Source On Resistance-Max: | 0.034Ω |
Rated Power Dissipation: | 190W |
Qg Gate Charge: | 84nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 75A |
Turn-on Delay Time: | 53ns |
Turn-off Delay Time: | 75ns |
Rise Time: | 33ns |
Fall Time: | 29ns |
Operating Temp Range: | -50°C to +150°C |
Gate Source Threshold: | 4V |
Technology: | Si |
Height - Max: | 9.52mm |
Length: | 10.4mm |
Input Capacitance: | 3260pF |
Package Style: | TO-220-3 (TO-220AB) |
Mounting Method: | Through Hole |
50
47.2997
2364.985
150
40.5411
6081.165
250
39.9636
9990.9
1000
38.241
38241
1500
37.8154
56723.1