AS4C16M16SA-6TCN DRAM (Dynamic RAM)_Inventory of electronic components_Electronic equipment_Power management_Shenzhen Xuanhui

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AS4C16M16SA-6TCN


：	AS4C16M16SA-6TCN
：	DRAM (Dynamic RAM)
：	Alliance Memory
：	AS4C4M16SA Seri
：	-
：	Tray
：	-

TYPE	DESCRIPTION
Memory Type:	SDRAM
Memory Density:	256Mb
Configuration:	16 M x 16
Supply Voltage-Nom:	3V to 3.6V
CAS Latency:	2/3
Number of Words:	16 M
Word Length:	16b
Access Time-Max:	5ns
Speed Grade:	166MHz
Interface Circuit Type:	Parallel
Power Dissipation:	1W
Operating Temp Range:	0°C to 70°C
Storage Temperature Range:	-55°C to +150°C
Moisture Sensitivity Level:	3
Package Style:	TSOP II-54
Mounting Method:	Surface Mount

PDF(1)

108

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