TYPE | DESCRIPTION |
Manufacturer: | Infineon |
Product Category: | MOSFET |
RoHS: | Details |
Technology: | SiC |
Mounting Style: | Through Hole |
Package / Case: | TO-247-3 |
Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 1.2 kV |
Id - Continuous Drain Current: | 33 A |
Rds On - Drain-Source Resistance: | 80 mOhms |
Vgs - Gate-Source Voltage: | - 7 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 5.7 V |
Qg - Gate Charge: | 28 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 150 mW |
Channel Mode: | Enhancement |
Packaging: | Tube |
Brand: | Infineon Technologies |
Product Type: | MOSFET |
Factory Pack Quantity: Factory Pack Quantity: | 30 |
Subcategory: | MOSFETs |
Part # Aliases: | AIMW120R080M1 SP004807194 |
1
35.62
35.62
10
32.74
327.4
120
28.26
3391.2