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| TYPE | DESCRIPTION |
| Manufacturer: | onsemi |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Id - Continuous Drain Current: | 10 A |
| Rds On - Drain-Source Resistance: | 400 mOhms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Qg - Gate Charge: | 38 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 31 W |
| Channel Mode: | Enhancement |
| Tradename: | SuperFET II |
| Packaging: | Tube |
| Brand: | onsemi / Fairchild |
| Configuration: | Single |
| Height: | 16.07 mm |
| Length: | 10.36 mm |
| Product Type: | MOSFET |
| Series: | FCPF400N60 |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Width: | 4.9 mm |
| Unit Weight: | 0.068784 oz |
1
4.68
4.68
10
4.22
42.2
25
3.98
99.5
100
3.4
340
500
2.8
1400
1000
2.3
2300
2000
2.22
4440
