TYPE | DESCRIPTION |
Manufacturer: | onsemi |
Product Category: | MOSFET |
Technology: | Si |
Mounting Style: | Through Hole |
Package / Case: | TO-247-4 |
Transistor Polarity: | N-Channel |
Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 650 V |
Id - Continuous Drain Current: | 142 A |
Rds On - Drain-Source Resistance: | 18 mOhms |
Vgs - Gate-Source Voltage: | - 8 V, + 22 V |
Vgs th - Gate-Source Threshold Voltage: | 4.3 V |
Qg - Gate Charge: | 283 nC |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 500 W |
Channel Mode: | Enhancement |
Brand: | onsemi |
Product Type: | MOSFET |
Factory Pack Quantity: Factory Pack Quantity: | 450 |
Subcategory: | MOSFETs |
1
81.9
81.9
10
76.44
764.4
25
73.24
1831
100
66.38
6638
450
market price
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