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| TYPE | DESCRIPTION |
| Manufacturer: | onsemi |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | SiC |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-4 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 1.2 kV |
| Id - Continuous Drain Current: | 17.3 A |
| Rds On - Drain-Source Resistance: | 224 mOhms |
| Vgs - Gate-Source Voltage: | - 15 V, + 25 V |
| Vgs th - Gate-Source Threshold Voltage: | 4.3 V |
| Qg - Gate Charge: | 34 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 175 C |
| Pd - Power Dissipation: | 111 W |
| Channel Mode: | Enhancement |
| Brand: | onsemi |
| Product Type: | MOSFET |
| Factory Pack Quantity: Factory Pack Quantity: | 450 |
| Subcategory: | MOSFETs |
| Unit Weight: | 0.211644 oz |
1
18.34
18.34
10
16.56
165.6
25
15.8
395
100
13.72
1372
450
11.92
5364
900
10.84
9756
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