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| TYPE | DESCRIPTION |
| Manufacturer: | ROHM Semiconductor |
| Product Category: | MOSFET |
| Technology: | Si |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220FM-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Id - Continuous Drain Current: | 9 A |
| Rds On - Drain-Source Resistance: | 585 mOhms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V, - 30 V, + 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 5 V |
| Qg - Gate Charge: | 16.5 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 48 W |
| Channel Mode: | Enhancement |
| Packaging: | Tube |
| Brand: | ROHM Semiconductor |
| Configuration: | Single |
| Fall Time: | 20 ns |
| Product Type: | MOSFET |
| Rise Time: | 20 ns |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Subcategory: | MOSFETs |
| Transistor Type: | Power MOSFET |
| Typical Turn-Off Delay Time: | 38 ns |
| Typical Turn-On Delay Time: | 20 ns |
1
5.64
5.64
10
5.08
50.8
25
4.8
120
100
4.08
408
500
3.36
1680
1000
2.76
2760
2000
2.52
5040
5000
2.42
12100
