取消
| TYPE | DESCRIPTION |
| Manufacturer: | Vishay |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247AD-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Id - Continuous Drain Current: | 62 A |
| Rds On - Drain-Source Resistance: | 52 mOhms |
| Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Qg - Gate Charge: | 229 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 175 C |
| Pd - Power Dissipation: | 625 W |
| Channel Mode: | Enhancement |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Brand: | Vishay / Siliconix |
| Configuration: | Single |
| Fall Time: | 102 ns |
| Product: | MOSFET |
| Product Type: | MOSFET |
| Rise Time: | 107 ns |
| Factory Pack Quantity: Factory Pack Quantity: | 480 |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Type: | Automotive E Series Power MOSFET With Fast Body Diode |
| Typical Turn-Off Delay Time: | 252 ns |
| Typical Turn-On Delay Time: | 65 ns |
| Unit Weight: | 0.211644 oz |
1
23.44
23.44
10
21.56
215.6
25
20.66
516.5
100
18.2
1820
480
16.18
7766.4
960
15.72
15091.2
.jpg "RT-02T-1.3B(LF)")
