MJE13003F1
Rev.E Mar.-2016 DATA SHEET
http://www.fsbrec.com 1 / 6
TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package.
耐压高，快速转换。
High
Voltage Capability High Speed Switching.
主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。
High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc.
PIN1：Base PIN 2：Collector PIN 3：Emitter
放大及印章代码 / hFE Classifications & Marking
见印章说明。See Marking Instructions.
描述 / Descriptions
特征 / Features
用途 / Applications
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
1
2
3
MJE13003F1
Rev.E Mar.-2016 DATA SHEET
http://www.fsbrec.com 2 / 6
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Collector to Base Voltage
V
CBO
600 V
Collector to Emitter Voltage
V
CEO
400 V
Emitter to Base Voltage V
EBO
9.0 V
Collector Current - Continuous I
C
0.8 A
Collector Power Dissipation P
C
1.0 W
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150 ℃
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值
Min
典型值
Typ
最大值
Max
单位
Unit
Collector to Base Breakdown
oltage
V
CBO
I
C
=1mA I
E
=0 600 V
Collector to Emitter Breakdown
oltage
V
CEO
I
C
=10mA I
B
=0 400 V
Emitter to Base Breakdown
oltage
V
EBO
I
E
=1mA I
C
=0 9.0 V
Collector Cut-Off Current I
CBO
V
CB
=600V I
E
=0 0.1 mA
Collector cut-off current I
CEO
V
CE
=400V I
B
=0 0.1 mA
Emitter Base Cut-Off Current I
EBO
V
EB
=9.0V I
C
=0 0.1 mA
DC Current Gain h
FE
V
CE
=5.0V I
C
=200mA 10 40
Collector to Emitter Saturation
oltage
V
CE(sat)
I
C
=200mA I
B
=40mA 0.5 V
Base to Emitter Saturation Voltage V
BE(sat)
I
C
=200mA I
B
=40mA 1.2 V
Transition Frequency f
T
V
CE
=10V I
C
=50mA
f=1.0MHz
5.0 MHz
Fall time t
f
V
CE
=5V I
C
=100mA
(UI9600)
0.6 μs
Storage time t
S
4.0 μs
极限参数 / Absolute Maximum Ratings(Ta=25℃)
电性能参数 / Electrical Characteristics(Ta=25℃)
MJE13003F1
Rev.E Mar.-2016 DATA SHEET
http://www.fsbrec.com 3 / 6
电参数曲线图 / Electrical Characteristic Curve
SOA(DC) P
C
-T
C
h
FE
-Ic h
FE
-Ic
Vces-I
C
Vbes-I
C
t
S
-Ta h
FE
-Ta
