IRF1010NS
IRF1010NL
HEXFET
®
Power MOSFET
02/14/02
V
DSS
= 55V
R
DS(on)
= 11mΩ
I
D
= 85A
S
D
G
Advanced HEXFET
®
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF1010NL) is available for low-
profile applications.
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Absolute Maximum Ratings
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 85
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 60 A
I
DM
Pulsed Drain Current 290
P
D
@T
C
= 25°C Power Dissipation 180 W
Linear Derating Factor 1.2 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
I
AR
Avalanche Current 43 A
E
AR
Repetitive Avalanche Energy 18 mJ
dv/dt Peak Diode Recovery dv/dt 3.6 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
2
D Pak
TO-262
IRF1010NLIRF1010NS
www.irf.com 1
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.85
R
θJA
Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40 °C/W
Thermal Resistance
PD - 94171
IRF1010NS/IRF1010NL
2 www.irf.com
S
D
G
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C, I
S
= 43A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 69 100 ns T
J
= 25°C, I
F
= 43A
Q
rr
Reverse Recovery Charge ––– 220 230 nC di/dt = 100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
85
290
A
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
J
= 25°C, L = 270µH
R
G
= 25Ω, I
AS
= 43A, V
GS
=10V (See Figure 12)
I
SD
≤ 43A, di/dt ≤ 210A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and
represents operation outside rated limits.
Notes:
This is a calculated value limited to T
J
= 175°C .
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Uses IRF1010N data and test conditions.
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to
application note #AN-994.
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 55 ––– ––– VV
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.058 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 11 mΩ V
GS
= 10V, I
D
= 43A
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 32 ––– ––– SV
DS
= 25V, I
D
= 43A
––– ––– 25
µA
V
DS
= 55V, V
GS
= 0V
––– ––– 250 V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -100
nA
V
GS
= -20V
Q
g
Total Gate Charge ––– ––– 120 I
D
= 43A
Q
gs
Gate-to-Source Charge ––– ––– 19 nC V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 41 V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time ––– 13 ––– V
DD
= 28V
t
r
Rise Time ––– 76 ––– I
D
= 43A
t
d(off)
Turn-Off Delay Time ––– 39 ––– R
G
= 3.6Ω
t
f
Fall Time ––– 48 ––– V
GS
= 10V, See Fig. 10
Between lead,
––– –––
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance ––– 3210 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 690 ––– V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 140 ––– pF ƒ = 1.0MHz, See Fig. 5
E
AS
Single Pulse Avalanche Energy ––– 1030250 mJ I
AS
= 4.3A, L = 270µH
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance ––– –––
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
IRF1010NS/IRF1010NL
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 175 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
4 6 8 10 12
V = 25V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
°
T = 175 C
J
°
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
85A
.jpg "HFE7/12-1HST-L1(257)")
