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A1P50S65M2

  • A1P50S65M2
  • A1P50S65M2
： A1P50S65M2
： IGBTs
： STMicroelectronics
： A1P50S65M2 Seri
： -
： Bulk
： -
TYPEDESCRIPTION
CE Voltage-Max:650V
Power Dissipation-Tot:208W
Gate - Emitter Voltage:20V
Pulsed Collector Current:100A
Collector - Emitter Saturation Voltage:1.95V
Turn-on Delay Time:143ns
Turn-off Delay Time:112ns
Qg Gate Charge:150nC
Reverse Recovery Time-Max:142ns
Leakage Current:500nA
Input Capacitance:4150F
Thermal Resistance:0.65°C/W
Operating Temp Range:-40°C to +150°C
No of Terminals:22
Mounting Method:Chassis Mount
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49780.3212

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908.1015

65383.308

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