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A2C25S12M3-F

  • A2C25S12M3-F
  • A2C25S12M3-F
： A2C25S12M3-F
： IGBTs
： STMicroelectronics
： A2C25S12M3-F Se
： -
： Tray
： -
TYPEDESCRIPTION
CE Voltage-Max:1200V
Power Dissipation-Tot:197W
Gate - Emitter Voltage:20V
Pulsed Collector Current:50A
Collector - Emitter Saturation Voltage:1.95V
Turn-on Delay Time:109ns
Turn-off Delay Time:109ns
Qg Gate Charge:80nC
Reverse Recovery Time-Max:190ns
Leakage Current:500nA
Input Capacitance:1550pF
Thermal Resistance:0.69°C/W
Operating Temp Range:-40°C to +150°C
No of Terminals:35
Mounting Method:Chassis Mount
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59535.2376

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