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IHW50N65R5XKSA1

  • IHW50N65R5XKSA1
  • IHW50N65R5XKSA1
： IHW50N65R5XKSA1
： IGBTs
： Infineon
： IHW50N65R5 Seri
： -
： Tube
： -
TYPEDESCRIPTION
CE Voltage-Max:650V
Collector Current @ 25C:80A
Power Dissipation-Tot:282W
Gate - Emitter Voltage:20V
Pulsed Collector Current:150A
Collector - Emitter Saturation Voltage:1.35V
Turn-on Delay Time:30ns
Turn-off Delay Time:210ns
Qg Gate Charge:230nC
Reverse Recovery Time-Max:137ns
Leakage Current:100nA
Input Capacitance:6140pF
Operating Temp Range:-40°C to +175°C
No of Terminals:3
Package Style: TO-247-3
Mounting Method:Through Hole
PDF(1)

30

44.9813

1349.439

480

36.9601

17740.848

720

36.5352

26305.344

960

36.2419

34792.224

1200

35.9586

43150.32

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