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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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BSC016N03LSGATMA1
BSC016N03LSGATMA1
:
BSC016N03LSGATMA1
:
Mosfets
:
Infineon
:
Single N-Channe
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
30V
Drain-Source On Resistance-Max:
1.6mΩ
Rated Power Dissipation:
2.5|W
Qg Gate Charge:
98nC
Mounting Method:
Surface Mount
PDF(1)
5000
12.8207
64103.5
QUECTEL
RG501Q-EU
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ATECC608B-SSHDA-B
CryptoAuthentication™ Device Co-Processor with Secure Key storage, 8 LEAD SOIC
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1892787-6
250 Position Vertical Socket Receptacle Assembly
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V8508E
Black Anodized 38.1 x 12.8 x 12.7 mm 6°C/W Press Fit Board Level Heatsink
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0034.6618
MST250 Series Time Lag 250 V 2 A Ø 8.5 x 8.5 mm Subminiature Radial Fuse
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EP12SD1WGE
EP Series SPDT On-Mom. Sealed Tiny Pushbutton Switch
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BSC016N03LSGATMA1
Single N-Channel 30 V 1.6 mOhm 98 nC OptiMOS™ Power Mosfet - TDSON-8
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GP15M Series 1000V 1.5 A Through Hole Glass Passivated Rectifier - DO-204AC
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FIXED IND 3.3UH 692MA 440MOHM SM
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NOS Series 10o uF ±20% 6.3 V SMT Niobium Oxide Capacitor
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PSR Series Ø44 mm 600 Hz to 4 kHz 99 dB 8 Ω PET Core Magnetic Speaker
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**CR2032.MFR.SC
Coin Cell Battery Li/MnO2 Bare Coin Cell
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Gate Drivers Hi Vtg Hi-Side & Lo-Side Gate Dvr
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NPB-360-48TB
Desktop AC Adapters 364.8W Lead-Acid and Li-Ion battery charger with Terminal Block output connector
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V23130C2021A412-EV-CBOX - Bulk
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RB228T-40NZC9
Schottky Diodes & Rectifiers SCHOTTKY DIODE
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