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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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BSC079N10NSGATMA1
BSC079N10NSGATMA1
:
BSC079N10NSGATMA1
:
Mosfets
:
Infineon
:
Single N-Channe
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
100V
Drain-Source On Resistance-Max:
7.9mΩ
Rated Power Dissipation:
156|W
Qg Gate Charge:
66nC
Package Style:
TDSON-8
Mounting Method:
Surface Mount
PDF(1)
5000
24.6401
123200.5
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