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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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BSC440N10NS3GATMA1
BSC440N10NS3GATMA1
:
BSC440N10NS3GATMA1
:
Mosfets
:
Infineon
:
N-Channel 100 V
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
100V
Drain-Source On Resistance-Max:
44mΩ
Rated Power Dissipation:
29|W
Qg Gate Charge:
8.1nC
Mounting Method:
Surface Mount
PDF(1)
5000
5.9426
29713
10000
5.8768
58768
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