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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 20V |
| Drain-Source On Resistance-Max: | 200mΩ |
| Rated Power Dissipation: | 417mW |
| Qg Gate Charge: | 3.9nC |
| Gate-Source Voltage-Max [Vgss]: | 8V |
| Drain Current: | 1.05A |
| Turn-on Delay Time: | 2ns |
| Turn-off Delay Time: | 45ns |
| Rise Time: | 4.5ns |
| Fall Time: | 20ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 0.57V |
| Technology: | Si |
| Input Capacitance: | 152pF |
| Package Style: | SOT-23 (SC-59,TO-236) |
| Mounting Method: | Surface Mount |
3000
2.8383
8514.9
6000
2.3032
13819.2
9000
2.296
20664
12000
2.2789
27346.8
15000
2.2617
33925.5
