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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 200V |
| Drain-Source On Resistance-Max: | 3Ω |
| Rated Power Dissipation: | 1W |
| Qg Gate Charge: | 10nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 0.4A |
| Turn-on Delay Time: | 2.7ns |
| Turn-off Delay Time: | 16.4ns |
| Rise Time: | 6ns |
| Fall Time: | 20ns |
| Operating Temp Range: | -65°C to +150°C |
| Gate Source Threshold: | 2.8V |
| Technology: | Si |
| Height - Max: | 1.6mm |
| Length: | 4.6mm |
| Input Capacitance: | 100pF |
| Package Style: | SOT-89 (SC-62) |
| Mounting Method: | Surface Mount |
1000
2.4206
2420.6
3000
1.9369
5810.7
5000
1.9027
9513.5
20000
1.8369
36738
30000
1.8197
54591
