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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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BSZ013NE2LS5IATMA1
BSZ013NE2LS5IATMA1
:
BSZ013NE2LS5IATMA1
:
Mosfets
:
Infineon
:
Single N-Channe
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
25V
Drain-Source On Resistance-Max:
1.3mΩ
Rated Power Dissipation:
2.1|W
Qg Gate Charge:
37nC
Package Style:
TSDSON-8
Mounting Method:
Surface Mount
PDF(1)
5000
21.201
106005
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505291-23
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505291-27
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