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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 146mΩ |
| Rated Power Dissipation: | 37W |
| Qg Gate Charge: | 6.8nC |
| Gate-Source Voltage-Max [Vgss]: | 10V |
| Drain Current: | 9.4A |
| Turn-on Delay Time: | 6ns |
| Turn-off Delay Time: | 10ns |
| Rise Time: | 10.9ns |
| Fall Time: | 7.9ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 1.7V |
| Technology: | TrenchMOS |
| Input Capacitance: | 537pF |
| Package Style: | SOT-669 |
| Mounting Method: | Surface Mount |
1500
6.944
10416
3000
6.5849
19754.7
4500
6.3017
28357.65
6000
5.9426
35655.6
7500
5.6593
42444.75
