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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 75V |
| Drain-Source On Resistance-Max: | 53mΩ |
| Rated Power Dissipation: | 60.4W |
| Qg Gate Charge: | 10.7nC |
| Gate-Source Voltage-Max [Vgss]: | 15V |
| Drain Current: | 20.73A |
| Turn-on Delay Time: | 15ns |
| Turn-off Delay Time: | 30ns |
| Rise Time: | 16ns |
| Fall Time: | 9ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 1.65V |
| Technology: | TrenchMOS |
| Input Capacitance: | 853pF |
| Package Style: | SOT-669 |
| Mounting Method: | Surface Mount |
1500
4.8754
7313.1
3000
4.5821
13746.3
4500
4.3646
19640.7
7500
4.1572
31179
15000
3.9398
59097
