TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 30V |
Drain-Source On Resistance-Max: | 29MΩ |
Rated Power Dissipation: | 1.42W |
Qg Gate Charge: | 4.7nC |
Gate-Source Voltage-Max [Vgss]: | 25V |
Drain Current: | 10A |
Turn-on Delay Time: | 4.76ns |
Turn-off Delay Time: | 19.5ns |
Rise Time: | 3.64ns |
Fall Time: | 4.9ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 2V |
Technology: | Si |
Height - Max: | 1.5mm |
Length: | 4.95mm |
Input Capacitance: | 493.5pF |
Package Style: | MSOIC-8 |
Mounting Method: | Surface Mount |
2500
1.6952
4238
7500
1.4013
10509.75
10000
1.3977
13977
25000
1.3641
34102.5
37500
1.3583
50936.25