DMG6601LVT-7 Mosfets_Inventory of electronic components_Electronic equipment_Power management_Shenzhen Xuanhui

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DMG6601LVT-7


：	DMG6601LVT-7
：	Mosfets
：	Diodes Incorporated
：	N & P-Chann
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	Dual N/P-Ch
No of Channels:	2
Drain-to-Source Voltage [Vdss]:	30V
Drain-Source On Resistance-Max:	55mΩ/110mΩ
Rated Power Dissipation:	0.85W
Qg Gate Charge:	12.3nC/13.8nC
Gate-Source Voltage-Max [Vgss]:	12V
Drain Current:	3.8A/2.5A
Turn-on Delay Time:	1.6ns/1.7ns
Turn-off Delay Time:	31.2ns/18.3ns
Rise Time:	7.4ns/4.6ns
Fall Time:	15.6ns/2.2ns
Operating Temp Range:	-55°C to +150°C
Gate Source Threshold:	1V/0.8V
Input Capacitance:	422pF/541pF
Package Style:	TSOT-26
Mounting Method:	Surface Mount

PDF(1)

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