取消
| TYPE | DESCRIPTION |
| Fet Type: | Dual N-Ch |
| No of Channels: | 2 |
| Drain-to-Source Voltage [Vdss]: | 12V |
| Drain-Source On Resistance-Max: | 38MΩ |
| Rated Power Dissipation: | 1.7W |
| Qg Gate Charge: | 23.1nC |
| Gate-Source Voltage-Max [Vgss]: | 10V |
| Drain Current: | 6.9A |
| Turn-on Delay Time: | 3ns |
| Turn-off Delay Time: | 17.2ns |
| Rise Time: | 9.3ns |
| Fall Time: | 2.8ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 1V |
| Technology: | Si |
| Height - Max: | 0.555mm |
| Length: | 2.075mm |
| Input Capacitance: | 917pF |
| Package Style: | UDFN-6 |
| Mounting Method: | Surface Mount |
3000
3.5049
10514.7
6000
2.8626
17175.6
9000
2.8383
25544.7
12000
2.821
33852
15000
2.8039
42058.5
