TYPE | DESCRIPTION |
Fet Type: | Dual N-Ch |
No of Channels: | 2 |
Drain-to-Source Voltage [Vdss]: | 20V |
Drain-Source On Resistance-Max: | 35mΩ |
Rated Power Dissipation: | 1.2W |
Qg Gate Charge: | 10.4nC |
Gate-Source Voltage-Max [Vgss]: | 8V |
Drain Current: | 5.8A |
Turn-on Delay Time: | 16.5ns |
Turn-off Delay Time: | 119.3ns |
Rise Time: | 33.3ns |
Fall Time: | 53.5ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 1.5V |
Technology: | Si |
Height - Max: | 1.75mm |
Length: | 4.95mm |
Input Capacitance: | 1171pF |
Package Style: | SOIC-8 |
Mounting Method: | Surface Mount |
2500
2.3032
5758
5000
1.9369
9684.5
10000
1.9027
19027
12500
1.8955
23693.75
37500
1.844
69150