TYPE | DESCRIPTION |
Fet Type: | Dual N-Ch |
No of Channels: | 2 |
Drain-to-Source Voltage [Vdss]: | 20V |
Drain-Source On Resistance-Max: | 55MΩ |
Rated Power Dissipation: | 1.42W |
Qg Gate Charge: | 12nC |
Gate-Source Voltage-Max [Vgss]: | 12V |
Drain Current: | 4.5A |
Turn-on Delay Time: | 5ns |
Turn-off Delay Time: | 25ns |
Rise Time: | 8ns |
Fall Time: | 8ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 1V |
Technology: | Si |
Height - Max: | 0.555mm |
Length: | 2.075mm |
Input Capacitance: | 389pF |
Package Style: | MSOIC-8 |
Mounting Method: | Surface Mount |
3000
2.2789
6836.7
6000
1.8611
11166.6
12000
1.8369
22042.8
15000
1.8197
27295.5