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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 21mΩ |
| Rated Power Dissipation: | 1.4W |
| Qg Gate Charge: | 13.2nC |
| Gate-Source Voltage-Max [Vgss]: | 25V |
| Drain Current: | 7.3A |
| Turn-on Delay Time: | 4.3ns |
| Turn-off Delay Time: | 20.1ns |
| Rise Time: | 4.4ns |
| Fall Time: | 4.1ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 1.7V |
| Input Capacitance: | 697pF |
| Package Style: | SOIC-8 |
| Mounting Method: | Surface Mount |
2500
1.7196
4299
7500
1.4248
10686
12500
1.4177
17721.25
25000
1.3977
34942.5
50000
1.3776
68880
