TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 30V |
Drain-Source On Resistance-Max: | 7Ω |
Rated Power Dissipation: | 300mW |
Qg Gate Charge: | 1.23nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 115mA |
Turn-on Delay Time: | 2.9ns |
Turn-off Delay Time: | 18.2ns |
Rise Time: | 2.6ns |
Fall Time: | 13.6ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 1.5V |
Technology: | Si |
Height - Max: | 1.7mm |
Length: | 0.8mm |
Input Capacitance: | 48pF |
Package Style: | SOT-523 |
Mounting Method: | Surface Mount |
3000
0.7396
2218.8
9000
0.6194
5574.6
15000
0.6166
9249
60000
0.598
35880
90000
0.5958
53622