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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 66mΩ |
| Rated Power Dissipation: | 1.56W |
| Qg Gate Charge: | 10.3nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 3.7A |
| Turn-on Delay Time: | 2.7ns |
| Turn-off Delay Time: | 14.7ns |
| Rise Time: | 2.4ns |
| Fall Time: | 5.4ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 3V |
| Input Capacitance: | 502pF |
| Package Style: | SOIC-8 |
| Mounting Method: | Surface Mount |
2500
4.1572
10393
5000
3.9398
19699
7500
3.7224
27918
10000
3.5049
35049
12500
3.3632
42040
