TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 60V |
Drain-Source On Resistance-Max: | 120MΩ |
Rated Power Dissipation: | 0.8W |
Qg Gate Charge: | 12.3nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 2.5A |
Turn-on Delay Time: | 3.5ns |
Turn-off Delay Time: | 35ns |
Rise Time: | 4.1ns |
Fall Time: | 11ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 3V |
Technology: | Si |
Height - Max: | 1mm |
Length: | 3mm |
Input Capacitance: | 606pF |
Package Style: | SOT-23 (SC-59,TO-236) |
Mounting Method: | Surface Mount |
3000
1.4607
4382.1
9000
1.2152
10936.8
12000
1.2017
14420.4
30000
1.1802
35406
45000
1.1752
52884