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| TYPE | DESCRIPTION |
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 14mΩ |
| Rated Power Dissipation: | 2.5|W |
| Qg Gate Charge: | 30.7nC |
| Gate-Source Voltage-Max [Vgss]: | 25V |
| Drain Current: | 12A |
| Turn-on Delay Time: | 5.1ns |
| Turn-off Delay Time: | 46ns |
| Rise Time: | 8ns |
| Fall Time: | 30ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 2V |
| Height - Max: | 1.5mm |
| Length: | 4.95mm |
| Package Style: | SOIC-8 |
| Mounting Method: | Surface Mount |
2500
5.017
12542.5
5000
4.7237
23618.5
7500
4.5163
33872.25
10000
4.2988
42988
