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| TYPE | DESCRIPTION |
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 40V |
| Drain-Source On Resistance-Max: | 11mΩ |
| Rated Power Dissipation: | 1.45W |
| Qg Gate Charge: | 47.5nC |
| Gate-Source Voltage-Max [Vgss]: | 25V |
| Drain Current: | 9.1A |
| Turn-on Delay Time: | 13.2ns |
| Turn-off Delay Time: | 302.7ns |
| Rise Time: | 10ns |
| Fall Time: | 137.9ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 2V |
| Input Capacitance: | 4234pF |
| Package Style: | SOIC-8 |
| Mounting Method: | Surface Mount |
2500
11.5361
28840.25
5000
9.24
46200
