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| TYPE | DESCRIPTION |
| Fet Type: | Dual P-Ch |
| No of Channels: | 2 |
| Drain-to-Source Voltage [Vdss]: | -60V |
| Drain-Source On Resistance-Max: | 130mΩ |
| Rated Power Dissipation: | 1.8W |
| Qg Gate Charge: | 8.2nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | -3.3A |
| Turn-on Delay Time: | 4.4ns |
| Turn-off Delay Time: | 34ns |
| Rise Time: | 23ns |
| Fall Time: | 42ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | -3V |
| Technology: | Si |
| Height - Max: | 1.75mm |
| Length: | 4.95mm |
| Input Capacitance: | 969pF |
| Package Style: | SOIC-8 |
| Mounting Method: | Surface Mount |
2500
3.9398
9849.5
5000
3.7224
18612
7500
3.5807
26855.25
10000
3.3632
33632
12500
3.2216
40270
