TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 600V |
Drain-Source On Resistance-Max: | 0.199Ω |
Rated Power Dissipation: | 35.7W |
Qg Gate Charge: | 52.3nC |
Gate-Source Voltage-Max [Vgss]: | 30V |
Drain Current: | 16A |
Turn-on Delay Time: | 15.8ns |
Turn-off Delay Time: | 60.3ns |
Rise Time: | 15.5ns |
Fall Time: | 20.2ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 4V |
Technology: | Si |
Height - Max: | 9.4mm |
Length: | 10.36mm |
Input Capacitance: | 1630pF |
Package Style: | TO-220F |
Mounting Method: | Through Hole |
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34.6439
1732.195