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FDA16N50-F109

  • FDA16N50-F109
  • FDA16N50-F109
FDA16N50-F109
Mosfets
onsemi
N-Channel 500 V
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:500V
Drain-Source On Resistance-Max:0.38Ω
Rated Power Dissipation:205W
Qg Gate Charge:32nC
Gate-Source Voltage-Max [Vgss]:30V
Drain Current:16.5A
Turn-on Delay Time:40ns
Turn-off Delay Time:65ns
Rise Time:150ns
Fall Time:80ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:5V
Input Capacitance:1495pF
Package Style: TO-3PN
Mounting Method:Through Hole
PDF(1)

30

38.3828

1151.484

120

26.8823

3225.876

450

24.2983

10934.235

900

23.1432

20828.88

2250

21.5625

48515.625

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