FDG6308P Mosfets_Inventory of electronic components_Electronic equipment_Power management

FDG6308P


：	FDG6308P
：	Mosfets
：	onsemi
：	P-Channel 20 V
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	Dual P-Ch
Drain-to-Source Voltage [Vdss]:	20V
Drain-Source On Resistance-Max:	400mΩ
Rated Power Dissipation:	300\|mW
Qg Gate Charge:	1.8nC
Package Style:	SOT-363 (SC-70-6, SC-88)
Mounting Method:	Surface Mount

PDF(1)

3000

3.2974

9892.2

6000

2.6623

15973.8

9000

2.6379

23741.1

12000

2.6208

31449.6

15000

2.6037

39055.5

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