TYPE | DESCRIPTION |
Fet Type: | Dual N-Ch |
Drain-to-Source Voltage [Vdss]: | 25V |
Drain-Source On Resistance-Max: | 23mΩ |
Rated Power Dissipation: | 800|mW |
Qg Gate Charge: | 11nC |
Package Style: | MICROFET 3x1.9 |
Mounting Method: | Surface Mount |
3000
6.0184
18055.2
6000
5.7351
34410.6
9000
5.4418
48976.2
12000
5.1587
61904.4