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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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FDMC86160
FDMC86160
:
FDMC86160
:
Mosfets
:
onsemi
:
N-Channel 100 V
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
100V
Drain-Source On Resistance-Max:
14mΩ
Rated Power Dissipation:
2.3|W
Qg Gate Charge:
22nC
Package Style:
POWER 33-8
Mounting Method:
Surface Mount
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