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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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FDMC86260
FDMC86260
:
FDMC86260
:
Mosfets
:
onsemi
:
N-Channel 150 V
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
150V
Drain-Source On Resistance-Max:
34mΩ
Rated Power Dissipation:
2.3|W
Qg Gate Charge:
15nC
Package Style:
POWER 33-8
Mounting Method:
Surface Mount
PDF(1)
3000
16.6189
49856.7
RENESAS
R7FA2L1A93CFM#AA0
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PESD5V0U4BW,115
PESD Series 2.9 pF Bi-Directional Quadruple ESD Protection Diode - SOT-665
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N-Channel 150 V 16 A 34 MΩ Surface Mount PowerTrench Mosfet - Power 33
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AW80581GH051003S LB5G
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Xilinx
XC6VLX195T-2FFG1156I
FPGA - Field Programmable Gate Array XC6VLX195T-2FFG1156I
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LOCKHEED MARTIN CORPORATION
330-0066-000
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