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晶体管
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离散器
/
金属氧化物半导体场效应晶体管
/
FDMS86103L
FDMS86103L
:
FDMS86103L
:
Mosfets
:
onsemi
:
FDMS86103L Seri
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
100V
Drain-Source On Resistance-Max:
8mΩ
Rated Power Dissipation:
2.5|W
Qg Gate Charge:
43nC
Package Style:
POWER 56-8
Mounting Method:
Surface Mount
PDF(1)
3000
16.0423
48126.9
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