TYPE | DESCRIPTION |
Fet Type: | Dual N-Ch |
Drain-to-Source Voltage [Vdss]: | 30V |
Drain-Source On Resistance-Max: | 28mΩ |
Rated Power Dissipation: | 0.9|W |
Qg Gate Charge: | 5.8nC |
Package Style: | SOIC-8 |
Mounting Method: | Surface Mount |
2500
9.24
23100
5000
7.4447
37223.5
7500
7.3789
55341.75