TYPE | DESCRIPTION |
Fet Type: | Dual N-Ch |
Drain-to-Source Voltage [Vdss]: | 30V |
Drain-Source On Resistance-Max: | 38mΩ |
Rated Power Dissipation: | 0.9|W |
Qg Gate Charge: | 3.8nC |
Package Style: | SOIC-8 |
Mounting Method: | Surface Mount |
2500
4.3646
10911.5
5000
4.1572
20786
7500
3.9398
29548.5
10000
3.7982
37982
12500
3.5807
44758.75