TYPE | DESCRIPTION |
Fet Type: | Dual N-Ch |
Drain-to-Source Voltage [Vdss]: | 30V |
Drain-Source On Resistance-Max: | 29mΩ |
Rated Power Dissipation: | 0.9|W |
Qg Gate Charge: | 17nC |
Package Style: | SOIC-8 |
Mounting Method: | Surface Mount |
2500
13.8979
34744.75
5000
11.1012
55506