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| TYPE | DESCRIPTION |
| Fet Type: | Dual N-Ch |
| No of Channels: | 2 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 105mΩ |
| Rated Power Dissipation: | 1.6|W |
| Qg Gate Charge: | 3.8nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 2.7A |
| Turn-on Delay Time: | 3.8ns |
| Turn-off Delay Time: | 9.5ns |
| Rise Time: | 1.2ns |
| Fall Time: | 1.6ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 1.7V |
| Technology: | PowerTrench |
| Height - Max: | 1.575mm |
| Length: | 4.9mm |
| Input Capacitance: | 227pF |
| Package Style: | SOIC-8 |
| Mounting Method: | Surface Mount |
2500
11.1771
27942.75
5000
8.9567
44783.5
